POWER ELECTRONICS I CA (EEEP2204)
Electrical and Electronic Engineering - EEE
Semester: Second Semester
Level: 200
Year: 2017
Proposed by Mr. KAMDEM Paul
REPUBLIC OF CAMEROON REPUBLIQUE DU CAMEROUN
Peace - Work – Fatherland Paix – Travail - Patrie
THE UNIVERSITY OF B AMENDA UNIVERSITE DE BAMENDA
COLLEGE OF THECHNOLOGY
COLTECH-B AMENDA
Electrical and Electronic Engineering
(EEE) Department/Level 1
Time: 01hour30min
CONTINUOUS ASSESSMENT
POWER ELECTRONICS I
Exercise I: Give a brief answer to the following questions
1. What is the meaning of : SCR. PIV. IGBT, GTO thyristor.
2. State the main difference between full wave and halfwave rectifiers
3. Draw the two transistors equivalent circuit of the Thyristor and explain why it can he
considered as a bidirectional component in term of voltage.
4. What is the main advantage of the full diodes bridge rectifier over the center-tap
rectifier?
5. Let’s consider the following i-v characteristics
5.1. What is the corresponding component?
5.2. Gives the corresponding idealized i-v characteristics.
Exercise II
Let’s consider a full-wave fully controlled single phase rectifier with a purely resistive
load R-100Ω. The primary voltage is 230V-50Hz and the transformation ratio k=0.025.
The firing angle of thyristors is considered as =
/4.
1.
Draw the corresponding diagram
2.
Draw the waveforms of the load voltage and the voltage across each thyristors.
3.
Calculate the average value (V
dc
) and the rms value (V
rms
) of the load voltage
4.
Deduce the form factor (FT) and the ripple factor (RF)
5.
What is the PIV of thyristors ?
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